preliminary SIDC04D60F6 edited by infineon technologies ai ps dd hv3, l 4334m , edition 2 , 14.05.2003 fast switching diode chip in emcon - technology this chip is used for: eupec power modules and discrete devices features: 600v emcon technology 70 m chip soft , fast switching low reverse recovery charge small temperature coefficient applications: smps, resonant applications, drives a c chip type v r i f die size package ordering code SIDC04D60F6 600v 9a 1.85 x 1.85 mm 2 sawn on foil q67050 - a4065 - a001 mechanical parameter: raster size 1.85 x 1.85 area total / act ive 3.42 / 2.07 anode pad size 1.37 x 1.37 mm 2 thickness 70 m wafer size 150 mm flat position 180 deg max. possible chips per wafer 4497 pcs passivation frontside photoimide anode metallisation 3200 nm alsicu cathode metallisation 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 350m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
preliminary SIDC04D60F6 edited by infineon technologies ai ps dd hv3, l 4334m , edition 2 , 14.05.2003 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm 600 v continuous forward current limited by t jmax i f 9 single pulse forward current (depending on wire bond configu ration) i fsm t p = 10 ms sinusoidal tbd maximum repetitive forward current limited by t jmax (depending on wire bond configuration) i frm 18 a operating junction and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested o n chip), t j =25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =600v t j =25 c 250 a cathode - anode breakdown voltage v br i r =800a t j =25c 600 v forward v oltage drop v f i f =9a t j =25 c 1.45 v dynamic electrical characteristics , at t j = 25 c, unless otherwise specified, tested at component value parameter symbol conditions min. typ. max. unit t rr1 i f =9a t j =25c 75 reverse recovery time t rr2 di/dt=800a/ m s v r =400v t j =150c 112 ns i rrm1 t j =25c 10.2 peak recovery current i rrm2 i f =9a di/dt=800a/ m s v r = 400v t j =150c 12.3 a q rr1 t j =25 c 343 reverse recovery charge q rr2 i f =9a di/dt=800a/ m s v r = 400v t j =150 c 612 nc di rr1 /dt t j = 25 c peak rat e of fall of reverse recovery current di rr2 /dt i f =9a di/dt=800a/ m s v r = 400v t j =150 c a/ m s s1 t j =25 c 4 softness s2 i f =9a di/dt=800a/ m s v r = 400v t j =150 c 5.7 1
preliminary SIDC04D60F6 edited by infineon technologies ai ps dd hv3, l 4334m , edition 2 , 14.05.2003 chip drawing:
preliminary SIDC04D60F6 edited by infineon technologies ai ps dd hv3, l 4334m , edition 2 , 14.05.2003 further electrical characteristics: this chip data sheet refers to the device data sheet infineon technologies / eupec tbd description: aql 0,65 for visual inspection according to failure catalog electrostatic dis charge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag bereich kommunikation st. - martin - strasse 53 d - 81541 mnchen ? infineon technologies ag 2000 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to war ranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain a nd / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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